BC 817U E6327

BC817U NPN Silicon AF Transistor Array • For AF stages and driver applications 4 • High current gain 3 5 2 6 • Low collector-saturation voltage 1 • Two (galvanic) internal isolated transistors with good matching in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 C1 B2 E2 6 5 4 TR2 TR1 1 2 3 E1 B1 C2 EHA07178 Type Marking BC817U 6Bs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SC74 Maximum Ratings Parameter Symbol Value Collector-emitter voltage VCEO 45 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 5 Collector current IC Peak collector current, tp ≤ 10 ms ICM Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 330 mW Junction temperature Tj 150 °C Storage temperature Tstg 500 Unit V mA 1000 TS ≤ 115 °C 1 -65 ... 150 2011-09-20 BC817U Thermal Resistance Parameter Symbol Value Unit Junction - soldering point1) RthJS ≤ 105 K/W Values Unit Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol min. typ. max. V(BR)CEO 45 - - V(BR)CBO 50 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current µA ICBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 °C - - 50 - - 100 Emitter-base cutoff current IEBO nA VEB = 4 V, IC = 0 DC current gain2) - hFE IC = 100 mA, VCE = 1 V 160 250 400 IC = 300 mA, VCE = 1 V 100 - - VCEsat - - 0.7 VBEsat - - 1.2 fT - 170 - MHz Ccb - 6 - pF Ceb - 60 - Collector-emitter saturation voltage2) V IC = 500 mA, IB = 50 mA Base emitter saturation voltage2) IC = 500 mA, IB = 50 mA AC Characteristics Transition frequency IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance f = 1 MHz, VBE = 10 V Emitter-base capacitance VEB = 0.5 V, f = 1 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300µs; D < 2% 2 2011-09-20 BC817U DC current gain hFE = ƒ(IC) VCE = 1 V Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 10 10 3 BC 817/818 10 3 ΙC EHP00223 mA 150 ˚C 25 ˚C -50 ˚C 10 2 hFE 5 10 2 10 1 5 105 °C 85 °C 65 °C 25 °C -40 °C 10 1 -5 10 10 0 5 10 -4 10 -3 10 -2 10 -1 10 -1 0 A 10 0 0.2 0.6 0.4 IC Collector cutoff current ICBO = ƒ(TA) VCBO = 25 V IC = ƒ(VBEsat), hFE = 10 ΙC BC 817/818 EHP00222 10 5 mA 10 Ι CBO 150 ˚C 25 ˚C -50 ˚C 2 0.8 VCEsat Base-emitter saturation voltage 10 3 V BC 817/818 EHP00221 nA 10 4 5 max 10 3 10 1 5 typ 10 2 10 0 10 1 5 10 -1 0 1.0 2.0 3.0 V 10 0 4.0 V BEsat 0 50 100 ˚C 150 TA 3 2011-09-20 BC817U Transition frequency fT = ƒ(IC) VCE = parameter in V, f = 2 GHz 10 3 Emitter-base capacitance Ceb = ƒ(VEB) 65 pF EHP00218 MHz 55 5 CCB/CEB fT BC 817/818 Collector-base capacitance Ccb = ƒ(VCB) 50 45 40 35 10 2 30 25 5 20 CEB 15 10 CCB 5 10 1 10 0 10 1 10 2 mA 0 0 10 3 2 4 6 8 10 12 14 ΙC V 16 20 VCB/V EB Total power dissipation P tot = ƒ(TS) Permissible Pulse Load RthJS = ƒ(tp) 10 3 360 K/W 300 10 2 RthJS 270 240 210 10 1 180 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 150 120 10 0 90 60 30 0 0 20 40 60 80 100 120 10 -1 -6 10 160 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-09-20 BC817U Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) Ptotmax/PtotDC 10 3 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 2011-09-20 Package SC74 BC817U Package Outline B 1.1 MAX. 1 2 3 0.35 +0.1 -0.05 Pin 1 marking 0.2 B 6x M A 0.1 MAX. 0.95 0.2 1.9 1.6 ±0.1 4 10˚ MAX. 5 2.5 ±0.1 6 0.25 ±0.1 0.15 +0.1 -0.06 (0.35) 10˚ MAX. 2.9 ±0.2 (2.25) M A Foot Print 2.9 1.9 0.5 0.95 Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Manufacturer 2005, June Date code (Year/Month) Pin 1 marking Laser marking BCW66H Type code Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = 10.000 Pieces/Reel For symmetric types no defined Pin 1 orientation in reel. 0.2 2.7 8 4 Pin 1 marking 3.15 1.15 6 2011-09-20 BC817U Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 7 2011-09-20